Philips bll6h0514l-130 0514ls-130 free download

File name bll6h0514l-130_0514ls-130.pdf

BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 -- 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp VDS PL Gp RLin D Pdroop(pulse) tr tf (MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns) pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8 1200 to 1400 300 10 50 130 17 10 50 0 15 8 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H0514L-130 (SOT1135A) 1 drain 1 1 2 gate 3 source [1] 2